ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,795, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANFACTURING Co. LTD. (Hsinchu, Taiwan). "Method of manufacturing FinFET devic... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,796, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure and met... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,797, issued on Aug. 25, was assigned to Renesas Electronics Corportaion (Tokyo). "Semiconductor device" was invented by Takahiro Mori (Toky... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,798, issued on Aug. 25, was assigned to Infineon Technologies Austria AG (Villach, Austria). "Semiconductor die and method of manufacturing... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,799, issued on Aug. 25, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Semiconductor device and method of manufacturing semicon... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,800, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device having a two-dimensiona... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,801, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Transistor structure with low r... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,802, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Gukhee... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,803, issued on Aug. 25, was assigned to Intel Corp. (Santa Clara, Calif.). "Fabrication of gate-all-around integrated circuit structures ha... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,804, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "High-temperature implant for gate-all-around devices... और पढ़ें